30 applications power semiconductors components 2/99 thanks to versions in the so-8, sot- 223, dpak and to-220 packages, this technology has now become well established on a global scale. this series was followed by 20v/30v products for low-voltage applications. a transistor in a to- 220 package allows a switch to be implemented with a resistance of less than 6 m w for switching cur- rents up to 80 a. thanks to the continuous develop- ment of the s-fet technology, tran- sistors for 24v and 48v applications are now available with a breakdown voltage of 100 v (fig. 1). new 100-v transistors in s-fet technology the new 100-v transistors from in- fineon technologies allow forward 100-v mos transistors in s-fet technology mosfets for the next millennium the latest 100-v mos transis- tors from infineon technologies are setting new standards for low-resistance switches: thanks to their s-fet technology,a 35% lower r ds(on) and up to 30% higher nominal currents can be achieved than for competitor products. the benefits for the user are a reduced power dissi- pation and hence the option of implementing more compact designs. in addition, the out- standing ruggedness of these transistors obviates the need for protection circuits. siemens semiconductors introduced the s-fet technology for power mosfet transistors in 1996. the 55/60-v transistors which were the first products of this development have proved highly successful. the authors: heinz amann is responsible for applications and customer support at the sales and solutions center of infineon technologies. christian schweizer , dipl.- ing., is responsible for the product management of low-voltage mos transistors. losses to be significantly reduced and higher currents to be switched than before. they are also distin- guished by their great ruggedness with respect to avalanches and short circuits. in addition forward resis- tors can now be implemented in more compact packages. thus a to-247 package can be replaced by a to-220 version with smaller di- mensions, giving the user greater flexibility in design and reduced in- sertion volumes. the 16-m w switch in the to-220 package sets new standards in terms of r ds(on) , drain current and avalanche stability. this is clearly il- lustrated by a comparison of the spp 70n10l with competitor models (figs. 2 to 4). thanks to the ruggedness of these transistors, the layout of many ap- 100-v s-fet complements the product range fig. 1 infineon technologies is currently offering mos transistors in s-fet technology with breakdown voltages of 20 to 100 v in the so-8, sot-223, dpak/ipak and to-220/to-263 packages. 55 v 8 m w buz 111s 7 m w buz 111sl 10 m w buz 110s 10 m w buz 110sl 15 m w buz 100s 12 m w buz 100sl 18 m w buz 102s 15 m w buz 102sl 36 m w buz 103s 26 m w buz 103sl 50 m w buz 101s 40 m w buz 101sl 80 m w buz 104s 64 m w buz 104sl 100 v 16 m w spp 70n10l 26 m w spp 47n10l 33 m w spp 47n10 packages to-220 / to-263 dpak/ipak so-8 sot-223 spp 47n10l spp 47n10 spp 47n10 spp 47n10l sipc 26sn10l spp 70n10l spp 47n10l spp 47n10l 20 v 200 m w bso 220n 30 v 17 m w bso 302sn 50 m w bso 305n 42 m w bso 304sn 75 m w bso 307n 75 m w bsp 308 15 m w spd 30n03 18 m w spd 30n03l 23 m w spd 28n03 28 m w spd 28n03 6 m w spp 80n03 8 m w spp 80n03l 15 m w spp 46n03 18 m w spp 46n03l 23 m w spp 30n03 28 m w spp 30n03l 55 v 36 m w spd 31n05 26 m w spd 28n05l 50 m w spd 23n05 40 m w spd 21n05l 80 m w spd 14n05 64 m w spd 13n05l 100 m w spd 09n05 100 m w spd 80n05l 60 v 120 m w bso 615nv 150 m w bso 615n 120 m w bsp 320s 150 m w bsp 318s
applications power semiconductors 31 components 2/99 target applications mosfets with break- down voltages of 100 v are used principally in the telecommunica- tions, industrial and au- tomotive sectors. their applications include: dc-dc converters for - telecommunications, - boost converters for supplying an additional voltage (e.g. hid lamps, common rail systems), - industrial power supplies for au- tomation technology in the range from several watts (flyback con- verters) up to several kw (for- ward converters). ups applications in the lower power range for pcs or smaller medical equipment, valve drivers for common-rail sys- tems in the latest motor vehicles, pulse rectifiers for - battery-powered vehicles - low-voltage motors in industry (fork-lift trucks, servo motors, smaller positioning drives), - three-phase asynchronous mo- tors, - dc motors with electronic com- mutation. simulation models circuit layouts can be designed much more efficiently with the aid of simulation models which take in- to account self-heating effects. the pspice and saber models can be downloaded from the follow- ing internet address: http://www.infineon.com/products/ 36/368.htm chips alone are available for all products. summary the new 100-v transistors in s-fet technology allow a significantly lower drain-source on resistance and considerably higher nominal currents than hitherto.the user can implement more compact designs thanks to their greatly reduced power dissipation. check #2-99-4 (hl) on reader service card http://www.infineon.com/ products/36/361.htm fig. 4 extreme ruggedness is a special performance feature of mos transis- tors. competitor comparison of avalanche energy fig. 3 a switch in the to-220 package can handle up to 70 a at 100v.this was made possible thanks to improvements in its thermal properties and mount- ing technology. competitor comparison of drain current plications becomes much simpler because protection circuits for dis- turbances (load jumps, short cir- cuits, line surge voltages etc.) can be obviated or significantly under-di- mensioned. fig. 2 the spp70n10l in the to-220 package attains the lowest r ds(on) available on the market for 100v transistors. competitor comparison of forward resistance
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